PLoS One. 2023 Jan 13;18(1):e0277331. doi: 10.1371/journal.pone.0277331. eCollection 2023.
Most silicon carbide (SiC) MOSFET models are application-specific. These are already defined by the manufacturers and their parameters are mostly partially accessible due to restrictions. The desired characteristic of any SiC model becomes highly important if an individual wants to visualize the impact of changing intrinsic parameters as well. Also, it requires a model prior knowledge to vary these parameters accordingly. This paper proposes the parameter extraction and its selection for Silicon Carbide (SiC) power N-MOSFET model in a unique way. The extracted parameters are verified through practical implementation with a small-scale high power DC-DC 5 to 2.5 output voltage buck converter using both hardware and software emphasis. The parameters extracted using the proposed method are also tested to verify the static and dynamic characteristics of SiC MOSFET. These parameters include intrinsic, junction and overlapping capacitance. The parameters thus extracted for the SiC MOSFET are analyzed by device performance. This includes input, output transfer characteristics and transient delays under different temperature conditions and loading capabilities. The simulation and experimental results show that the parameters are highly accurate. With its development, researchers will be able to simulate and test any change in intrinsic parameters along with circuit emphasis.