Pioneering beyond-silicon technology via residue-free field effect transistors

A revolution in technology is on the horizon, and it’s poised to change the devices that we use. Under the leadership of Professor Lee Young Hee, a team of researchers from the Center for Integrated Nanostructure Physics within the Institute for Basic Science (IBS), South Korea, has unveiled a new discovery that can greatly improve the fabrication of field-effect transistors (FET).


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